After more than a decade of research and development, Tokyo Electron Miyagi Ltd. has introduced an innovative semiconductor ...
With advances in new technology it is getting more important to monitor all aspects of the influencing parameters in critical etch steps and utilize them as tuning knobs for within-wafer uniformity ...
(Nanowerk News) Imec and KLA Tencor have established a metrology method for optimizing the etch rate uniformity (ERU) in a transformer coupled plasma (TCP) reactor. The proposed metrology method makes ...
A large-scale (4-inch), highly uniform, and defect-free plasma etching technology, which will likely become the foundation of the industrial supply of molybdenum disulfide (MoS₂), a next-generation ...
Released every 12 to 18 months, 3D NAND scaling outpaces most other semiconductor devices in replacement rate and performance ...
Mass spectrometry, by contrast, is a powerful technique for the analysis of any process gas. Careful consideration of differences in pressure, reaction time scales and process flow is essential for ...
Quadrupole mass-spectroscopy has reported significant neutral and ionic species in the unique C 5 HF 7 /O 2 /Ar plasma, including C x F y (X>2), C x HF y, and C x F y (Y/X<2). Using C 5 HF 7 /O 2 /Ar ...
What is Reactive Ion Etching (RIE)? Reactive Ion Etching (RIE) is a dry etching technique widely used in the fabrication of micro- and nanodevices. It combines the chemical reactivity of reactive ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results
Feedback