Abstract: Experimental development of gate-all-around silicon nanowire field-effect transistors (NWFETs), a viable replacement for FinFETs, can be complemented by technology computer-aided design.

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Abstract: The paper discussed recent progresses of hafnium oxide-based ferroelectric materials, devices and chip technologies which improves the performance, reliability and energy efficiency, ...

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Department of Chemical Engineering and Biotechnology, College of Engineering, National Taipei University of Technology, No. 1, Section 3, Chung-Hsiao East Road, Taipei, Taiwan 10608, Republic of China ...